Background
In support of their litigation case, a law firm client needed detailed materials analysis to demonstrate material composition of the junction between source/drain and contact regions in a FinFET device.
Engagement
We developed a set of tests using a series of TEM sections and high-resolution EELS line scans and determined the elemental composition of the junction region to sufficient detail to support Client’s patent claims.
Results
We were able to demonstrate through reverse engineering that the extremely complex accused product infringed the claimed invention.
